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2SD1667 NPN Transistor

2SD1667 Description

isc Silicon NPN Power Transistor 2SD1667 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector Saturation Voltage- : VCE(sat)= 0. Complement t.

2SD1667 Applications

* Designed for relay drivers,high-speed inverters,and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector C

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Datasheet Details

Part number
2SD1667
Manufacturer
INCHANGE
File Size
215.95 KB
Datasheet
2SD1667-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1667-like datasheet