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2SD1668 NPN Transistor

2SD1668 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector Saturation Voltage- : VCE(sat)= 0. Wide Area of Safe Op.

2SD1668 Applications

* Designed for relay drivers,high speed inverters,converters and other general high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC

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Datasheet Details

Part number
2SD1668
Manufacturer
INCHANGE
File Size
210.73 KB
Datasheet
2SD1668-INCHANGE.pdf
Description
NPN Transistor

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INCHANGE 2SD1668-like datasheet