2SD1669 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1669 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector Saturation Voltage- : VCE(sat)= 0. Wide Area of Safe Op.

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Datasheet Specifications

Part number: 2SD1669
Manufacturer: INCHANGE
File Size: 210.34 KB
Datasheet: 2SD1669-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for relay drivers,high speed inverters,converters and other general high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC

2SD1669 Distributors

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2SD1669 NPN Transistor INCHANGE

INCHANGE 2SD1669-like datasheet