2SD1763 Datasheet - INCHANGE

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2SD1763 NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min. Good Linearity of hFE. Complement to Type 2SB1186. Minimum Lot-to-L.

2SD1763-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1763

Manufacturer:

INCHANGE

File Size:

205.10 KB

Description:

NPN Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM

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2SD1763 NPN Transistor INCHANGE

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