2SD1763 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1763 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min. Good Linearity of hFE. Complement to Type 2SB1186. Minimum Lot-to-L.

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Datasheet Specifications

Part number: 2SD1763
Manufacturer: INCHANGE
File Size: 205.10 KB
Datasheet: 2SD1763-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM

2SD1763 Distributors

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2SD1763 NPN Transistor INCHANGE

INCHANGE 2SD1763-like datasheet