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2SD1763 Datasheet - INCHANGE

2SD1763 NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) *Good Linearity of hFE *Complement to Type 2SB1186 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier applications. *Driver stage amplifier applica.

2SD1763-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1763

Manufacturer:

INCHANGE

File Size:

205.10 KB

Description:

Npn transistor.

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