2SD1892 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 5000(Min) @IC= 4A. Low Collector Saturation Voltg.

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Datasheet Specifications

Part number: 2SD1892
Manufacturer: INCHANGE
File Size: 187.19 KB
Datasheet: 2SD1892-INCHANGE.pdf
Description: NPN Transistor

Applications

* For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissip

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2SD1892 NPN Transistor INCHANGE

INCHANGE 2SD1892-like datasheet