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2SD1985 NPN Transistor

2SD1985 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 1.

2SD1985 Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collecto

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Datasheet Details

Part number
2SD1985
Manufacturer
INCHANGE
File Size
212.30 KB
Datasheet
2SD1985-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1985-like datasheet