Datasheet4U Logo Datasheet4U.com

2SD1985A NPN Transistor

2SD1985A Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min. Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 1.

2SD1985A Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collecto

📥 Download Datasheet

Preview of 2SD1985A PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1985A
Manufacturer
INCHANGE
File Size
212.32 KB
Datasheet
2SD1985A-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1985 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1980 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1981 - NPN Transistor (Sanyo Semicon Device)
  • 2SD1902 - PNP/NPN Triple Diffused Planar Type Silicon Transistors (Sanyo Semicon Device)
  • 2SD1903 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1904 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1905 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD1906 - PNP/NPN Epitaxial Planar Type Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1985A-like datasheet