2SD1985A NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min. Good Linearity of hFE. Low Collector Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2SD1985A
Manufacturer: INCHANGE
File Size: 212.32 KB
Datasheet: 2SD1985A-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collecto

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2SD1985A NPN Transistor INCHANGE

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