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2SD2196 NPN Transistor

2SD2196 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1500(Min. High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min). Minimum Lot.

2SD2196 Applications

* Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-P

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Datasheet Details

Part number
2SD2196
Manufacturer
INCHANGE
File Size
200.14 KB
Datasheet
2SD2196-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2196-like datasheet