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2SD553 NPN Transistor

2SD553 Description

isc Silicon NPN Power Transistor 2SD553 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Compl.

2SD553 Applications

* High current switching applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B

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Datasheet Details

Part number
2SD553
Manufacturer
INCHANGE
File Size
209.45 KB
Datasheet
2SD553-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD553-like datasheet