2SD684 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min). High DC Current Gain- : hFE= 1500(Min. Low Collector-Emitter Satur.

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Datasheet Specifications

Part number: 2SD684
Manufacturer: INCHANGE
File Size: 203.73 KB
Datasheet: 2SD684-INCHANGE.pdf
Description: NPN Transistor

Applications

* Igniter applications.
* High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Cu

2SD684 Distributors

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2SD684 NPN Transistor INCHANGE

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