2SD684 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD684

Manufacturer:

INCHANGE

File Size:

203.73kb

Download:

📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min)

High DC Current Gain- : hFE= 1500(Min.)@IC= 2A

2SD684 Application

• Applications
• Igniter applications.
• High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

TAGS

2SD684

INCHANGE

📁 Related Datasheet

2SD683 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain- : hFE= 5.

2SD683 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD683A, HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE APPLICATIONS. FEATURES .

2SD683A - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD683A, HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE APPLICATIONS. FEATURES .

2SD684 - NPN Transistor (Toshiba)
2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLIC.

2SD684A - NPN Transistor (Toshiba)
: 2SD684A , SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • Hi.

2SD685 - NPN Transistor (Toshiba)
2SD685 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. FEATURES : . Hi.

2SD686 - NPN Transistor (Toshiba)
:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATU.

2SD686 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 .. DESCRIPTION ·With TO-220C package ·Compleme.

2SD686 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR.

2SD687 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR.