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2SD866 NPN Transistor

2SD866 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= 0.

2SD866 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC

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Datasheet Details

Part number
2SD866
Manufacturer
INCHANGE
File Size
210.34 KB
Datasheet
2SD866-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD866-like datasheet