IPD25CN10N Datasheet, Mosfet, INCHANGE

IPD25CN10N Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤25mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD25CN10N

Manufacturer:

INCHANGE

File Size:

238.16kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD25CN10N Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD25CN10N

INCHANGE

📁 Related Datasheet

IPD25CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPD25CN10NG - Power-Transistor (Infineon Technologies)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPD25CNE8NG - Power-Transistor (Infineon Technologies)
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charg.

IPD250N06N3G - Power-Transistor (Infineon Technologies)
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excelle.

IPD25N06S2-40 - Power-Transistor (Infineon Technologies)
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem.

IPD25N06S4L-30 - Power-Transistor (Infineon Technologies)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature.

IPD200N15N3 - Power-Transistor (Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPD200N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhancement mode: ·100% avalanch.

IPD200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPD20N03L - OptiMOS Buck converter series (Infineon Technologies AG)
IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A .