IXFH160N15T Datasheet - INCHANGE

IXFH160N15T - N-Channel MOSFET

IXFH160N15T Features

* Drain Source Voltage- : VDSS= 150V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 9.6mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Powe

Datasheet Details

IXFH160N15T

INCHANGE

333.17 KB

N-channel mosfet.

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