IXFH16N90 Datasheet - IXYS

IXFH16N90 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH16N90 IXF.

IXFH16N90 Features

* l l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ =

IXFH16N90 Datasheet (214.63 KB)

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Datasheet Details

Part number:

IXFH16N90

Manufacturer:

IXYS

File Size:

214.63 KB

Description:

Hiperfet power mosfets.

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IXFH16N90 HiPerFET Power MOSFETs IXYS

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