IXFH16N120P Datasheet - IXYS Corporation

IXFH16N120P Power MOSFET

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT16N120P IXFH16N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 T.

IXFH16N120P Features

* z International Standard Packages z Fast Recovery Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Switch-mode and Resonant-Mode Power Supplies z High Voltage Pulse Power Applications z High Voltage Discharge

IXFH16N120P_IXYSCorporation.pdf