PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maxi
IXFH16N80P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH16N80P
Manufacturer:
IXYS Corporation
File Size:
218.88 KB
Description:
Power mosfet.