HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S ≤ I, DM di/dt
Datasheet Details
Part number:
IXFH16N90Q
Manufacturer:
IXYS
File Size:
203.07 KB
Description:
Power mosfet.