IXFH16N90Q Datasheet - IXYS

IXFH16N90Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S ≤ I, DM di/dt.

IXFH16N90Q Features

* Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 900 VDS = VGS, ID = 4 mA 3.0 V GS = ±20 V, DC V DS = 0 VDS = VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5

IXFH16N90Q-IXYS.pdf