IXTH1N100 - N-Channel MOSFET

INCHANGE

IXTH1N100 Datasheet Preview — Preview of IXTH1N100 PDF

Datasheet Details

Part number	IXTH1N100
Manufacturer	INCHANGE
File Size	332.93 KB
Description	N-Channel MOSFET
Datasheet	IXTH1N100-INCHANGE.pdf

IXTH1N100 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 1000 V ±20 V 1.5 A 6 A 60 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current ID= 1.5A@ TC=25℃.
Drain Source Voltage- : VDSS= 1000V(Min).
Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 11, 2020 |