Part number:
IXTH1N100
Manufacturer:
INCHANGE
File Size:
332.93 KB
Description:
N-channel mosfet.
* Drain Current ID= 1.5A@ TC=25℃
* Drain Source Voltage- : VDSS= 1000V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* Designed for use in switc
IXTH1N100 Datasheet (332.93 KB)
IXTH1N100
INCHANGE
332.93 KB
N-channel mosfet.
📁 Related Datasheet
IXTH1N100 High-Voltage MOSFET (IXYS Corporation)
IXTH1N170DHV N-Channel MOSFET (IXYS)
IXTH1N200P3 High Voltage Power MOSFET (IXYS)
IXTH1N200P3HV High Voltage Power MOSFET (IXYS)
IXTH1N250 High Voltage Power MOSFET (IXYS)
IXTH1N300P3HV High Voltage Power MOSFET (IXYS)
IXTH1N450HV High Voltage Power MOSFET (IXYS)
IXTH102N15T Power MOSFET (IXYS)
IXTH102N15T N-Channel MOSFET (INCHANGE)
IXTH102N20T Power MOSFET (IXYS)