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IXTH1N100

N-Channel MOSFET

IXTH1N100 Features

* Drain Current ID= 1.5A@ TC=25℃

* Drain Source Voltage- : VDSS= 1000V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in switc

IXTH1N100 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ T.

IXTH1N100 Datasheet (332.93 KB)

Preview of IXTH1N100 PDF

Datasheet Details

Part number:

IXTH1N100

Manufacturer:

INCHANGE

File Size:

332.93 KB

Description:

N-channel mosfet.

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TAGS

IXTH1N100 N-Channel MOSFET INCHANGE

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