* High Blocking Voltage
* High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characterist
IXTH1N450HV Datasheet (214.11 KB)
IXTH1N450HV
IXYS
214.11 KB
High voltage power mosfet.
High Voltage Power MOSFET
IXTT1N450HV IXTH1N450HV
VDSS I
D25
RDS(on)
= 4500V = 1A 80
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS VGSM
ID.
📁 Related Datasheet
IXTH1N100 N-Channel MOSFET (INCHANGE)
IXTH1N100 High-Voltage MOSFET (IXYS Corporation)
IXTH1N170DHV N-Channel MOSFET (IXYS)
IXTH1N200P3 High Voltage Power MOSFET (IXYS)
IXTH1N200P3HV High Voltage Power MOSFET (IXYS)
IXTH1N250 High Voltage Power MOSFET (IXYS)
IXTH1N300P3HV High Voltage Power MOSFET (IXYS)
IXTH102N15T Power MOSFET (IXYS)
IXTH102N15T N-Channel MOSFET (INCHANGE)
IXTH102N20T Power MOSFET (IXYS)
