Description
High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A 80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.
Features
* High Blocking Voltage
* High Voltage Package
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = 3.6kV, VGS = 0V
VDS = 4.5kV
VDS = 3.6kV
TJ = 100C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characterist
Applications
* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems
© 2014 IXYS CORPORATION, All Rights Reserved
DS100500D(04/14)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 50V, ID = 200mA, Note 1