IXTH1N300P3HV Datasheet, Mosfet, IXYS

IXTH1N300P3HV Features

• Mosfet
• High Blocking Voltage
• High Voltage Packages Advantages
• Easy to Mount
• Space Savings
• High Power Density Applications
• High Volta

PDF File Details

Part number:

IXTH1N300P3HV

Manufacturer:

IXYS

File Size:

216.10kb

Download:

📄 Datasheet

Description:

High voltage power mosfet.

IXTH1N300P3HV Application

• Applications
• High Voltage Power Supplies
• Capacitor Discharge Applications
• Pulse Circuits
• Laser and X-Ray Gen

TAGS

IXTH1N300P3HV

IXYS

📁 Related Datasheet

IXTH1N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance.

IXTH1N100 - High-Voltage MOSFET (IXYS Corporation)
Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 100.

IXTH1N170DHV - N-Channel MOSFET (IXYS)
Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTA1N170DHV IXTH1N170DHV VDSX = ID(on) >  RDS(on) 1700V 1A 16 TO-263HV (IXTA.

IXTH1N200P3 - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS.

IXTH1N200P3HV - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS.

IXTH1N250 - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS V.

IXTH1N450HV - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.

IXTH102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTH102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTH102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.