Datasheet Details
Part number:
IXTH1N300P3HV, IXTT1N300P3HV
Manufacturer:
IXYS
File Size:
216.10 KB
Description:
High voltage power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTH1N300P3HV, IXTT1N300P3HV.
Please refer to the document for exact specifications by model.
IXTH1N300P3HV, IXTT1N300P3HV, High Voltage Power MOSFET
High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A 50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torq
IXTH1N300P3HV Features
* High Blocking Voltage
* High Voltage Packages Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2014 IXYS CORPORA
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