IXTH1N300P3HV Datasheet - IXYS

IXTH1N300P3HV High Voltage Power MOSFET

High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torq.

IXTH1N300P3HV Features

* High Blocking Voltage

* High Voltage Packages Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Capacitor Discharge Applications

* Pulse Circuits

IXTH1N300P3HV Datasheet (216.10 KB)

IXTH1N300P3HV Datasheet Preview — Preview of IXTH1N300P3HV PDF

Datasheet Details

Part number:

IXTH1N300P3HV

Manufacturer:

IXYS

File Size:

216.10 KB

Description:

High voltage power mosfet.

📁 Related Datasheet

IXTH1N100 N-Channel MOSFET (INCHANGE)

IXTH1N100 High-Voltage MOSFET (IXYS Corporation)

IXTH1N170DHV N-Channel MOSFET (IXYS)

IXTH1N200P3 High Voltage Power MOSFET (IXYS)

IXTH1N200P3HV High Voltage Power MOSFET (IXYS)

IXTH1N250 High Voltage Power MOSFET (IXYS)

IXTH1N450HV High Voltage Power MOSFET (IXYS)

IXTH102N15T Power MOSFET (IXYS)

IXTH102N15T N-Channel MOSFET (INCHANGE)

IXTH102N20T Power MOSFET (IXYS)

TAGS

IXTH1N300P3HV High Voltage Power MOSFET IXYS

Image Gallery

IXTH1N300P3HV Distributor