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IXTH1N170DHV, IXTA1N170DHV Datasheet - IXYS

IXTH1N170DHV - N-Channel MOSFET

Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTA1N170DHV IXTH1N170DHV VDSX = ID(on) >  RDS(on) 1700V 1A 16 TO-263HV (IXTA) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1700 V 1700 V 20 V 30 V TC = 25C 290 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C

IXTH1N170DHV Features

* Normally ON Mode

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID

IXTA1N170DHV-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTH1N170DHV, IXTA1N170DHV. Please refer to the document for exact specifications by model.
IXTH1N170DHV Datasheet Preview Page 2 IXTH1N170DHV Datasheet Preview Page 3

Datasheet Details

Part number:

IXTH1N170DHV, IXTA1N170DHV

Manufacturer:

IXYS

File Size:

240.89 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTH1N170DHV, IXTA1N170DHV.
Please refer to the document for exact specifications by model.

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IXTA1N170DHV N-Channel MOSFET IXYS