IXTH1N250 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS V.

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Datasheet Specifications

Part number: IXTH1N250
Manufacturer: IXYS
File Size: 118.75 KB
Datasheet: IXTH1N250-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* z International Standard Package z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ID

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS99761C(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) t

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IXTH1N250 High Voltage Power MOSFET IXYS

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