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IXTH1N250 - High Voltage Power MOSFET

IXYS

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Datasheet Details

Part number	IXTH1N250
Manufacturer	IXYS
File Size	118.75 KB
Description	High Voltage Power MOSFET
Datasheet	IXTH1N250-IXYS.pdf

IXTH1N250 Product details

Features

z International Standard Package z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8.
VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.0 4.0 V ±100 nA 25 μA 25 μA 40 Ω Advant.

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Published: Feb 16, 2025 |