* z International Standard Package z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ID
IXTH1N250 Datasheet (118.75 KB)
IXTH1N250
IXYS
118.75 KB
High voltage power mosfet.
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTH1N250 VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω Symbol VDSS VDGR VGSS V.
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