IXTH1N200P3HV - High Voltage Power MOSFET
High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A 40 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 2000 V 2000 V 20 V 30 V TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM 1.0 A 0.6 A 3.0 A TC = 25C 125 W - 55 +150 C 150 C - 55 +150 C
IXTH1N200P3HV Features
* High Blocking Voltage
* High Voltage Packages Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2017 IXYS CORPO