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IXTH96N20P Datasheet - INCHANGE

IXTH96N20P N-Channel MOSFET

IXTH96N20P Features

* Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

* Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(

Datasheet Details

IXTH96N20P

INCHANGE

316.74 KB

N-channel mosfet.

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IXTH96N20P N-Channel MOSFET INCHANGE

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