IXTH96N20P Datasheet - INCHANGE

IXTH96N20P, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature THERMAL CHARACTERI

IXTH96N20P-INCHANGE.pdf