IXTP1R6N50P Datasheet, Mosfet, INCHANGE

IXTP1R6N50P Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 6.5Ω
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot variatio

PDF File Details

Part number:

IXTP1R6N50P

Manufacturer:

INCHANGE

File Size:

247.19kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTP1R6N50P Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IXTP1R6N50P

INCHANGE

📁 Related Datasheet

IXTP1R6N50D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditio.

IXTP1R6N50P - Power MOSFET (IXYS)
PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intri.

IXTP1R6N100D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VD.

IXTP1R4N100P - Power MOSFET (IXYS)
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .

IXTP1R4N100P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo.

IXTP1R4N120P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.

IXTP1R4N60P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

IXTP1R4N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt.

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTP100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.