IXTQ52P10P P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTQ52P10P
Manufacturer: INCHANGE
File Size: 252.32 KB
Datasheet: IXTQ52P10P-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= -100V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤50mΩ@VGS= -10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Easy to Mount
* Space Savings
* High Power Density
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -52 A IDM Drain Current-Single Plused -130 A PD

IXTQ52P10P Distributors

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IXTQ52P10P P-Channel MOSFET INCHANGE

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