IXTQ50N20P Datasheet - IXYS Corporation

IXTQ50N20P Power MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum R.

IXTQ50N20P Features

* International standard packages

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect Advantages

* Easy to mount

* Space savings

IXTQ50N20P Datasheet (160.63 KB)

IXTQ50N20P Datasheet Preview — Preview of IXTQ50N20P PDF

Datasheet Details

Part number:

IXTQ50N20P

Manufacturer:

IXYS Corporation

File Size:

160.63 KB

Description:

Power mosfet.

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IXTQ50N20P Power MOSFET IXYS Corporation

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