Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH) RDS(on) VD.
Features
* z z z z z z z z
1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247)
300 260 1.13/10 6.0 5.5 3.0 2.5
International standard packages Fast intrinsic diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM process Low QG and Rd
Applications
* z z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V VGS = -10V, ID = 0.5
* ID25, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. -100 - 2.5 - 4.