IXTQ52P10P Datasheet - IXYS Corporation

IXTQ52P10P P-Channel MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH) RDS(on) VDSS ID25 = = ≤ - 100V - 52A 50mΩ TO-220 (IXTP) G S D (TAB) G D D (TAB) S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ .

IXTQ52P10P Features

* z z z z z z z z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247) 300 260 1.13/10 6.0 5.5 3.0 2.5 International standard packages Fast intrinsic diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM process Low QG and Rd

IXTQ52P10P Datasheet (186.41 KB)