IXTQ50N25T Datasheet - IXYS

IXTQ50N25T Trench Gate Power MOSFET

Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR V GSM ID25 IDM IA EAS PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 A 130 A TC = 25°C TC = 25°C 5 A 1.5 .

IXTQ50N25T Features

* z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Unin

IXTQ50N25T Datasheet (269.23 KB)