IXTQ88N28T - N-Channel MOSFET
IXTQ88N28T Features
* Drain Source Voltage- : VDSS= 250V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switch-Mode and Resonant-Mode Power
