IXTQ82N25P Datasheet, mosfet equivalent, IXYS Corporation

IXTQ82N25P Features

• Mosfet
• Fast Intrinsic Rectifier
• Avalanche Rated
• Low RDS(ON) and QG
• Low Package Inductance Advantages
• High Power Density
• Easy to Moun

PDF File Details

Part number:

IXTQ82N25P

Manufacturer:

IXYS Corporation

File Size:

147.80kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTQ82N25P Application

• Applications
• Switch-Mode and Resonant-Mode Power Supplies
• DC-DC Converters
• Laser Drivers
• AC and DC Motor Dri

TAGS

IXTQ82N25P

IXYS Corporation

📁 Related Datasheet

IXTQ82N25P - Power MOSFET (IXYS Corporation)
PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS.

IXTQ86N20T - Power MOSFET (IXYS)
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv.

IXTQ86N20T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 29mΩ(Max) ·Fast Swi.

IXTQ86N25T - Power MOSFET (IXYS)
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 .

IXTQ86N25T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Swi.

IXTQ88N28T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Swi.

IXTQ88N28T - Power MOSFET (IXYS)
Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS .

IXTQ88N30P - PolarHT Power MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A.

IXTQ88N30P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Swi.

IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.