IXTQ86N20T, IXTA86N20T Datasheet (IXYS)

IXTQ86N20T - Power MOSFET

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 86 260 10 1 550 3 -55 +175 175 -55 +175 A A A J W V/ns C C

IXTQ86N20T Features

* High Current Handling Capability

* Avalanche Rated

* Fast Intrinsic rectifier

* Low R DS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Supplies

IXTQ86N20T, IXTA86N20T Datasheet - IXYS

IXTQ86N20T - Power MOSFET

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