IXTQ86N20T - Power MOSFET
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C 86 260 10 1 550 3 -55 +175 175 -55 +175 A A A J W V/ns C C
IXTQ86N20T Features
* High Current Handling Capability
* Avalanche Rated
* Fast Intrinsic rectifier
* Low R DS(on) Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies