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STP9NM40N N-Channel MOSFET

STP9NM40N Description

isc N-Channel MOSFET Transistor STP9NM40N .

STP9NM40N Features

* Drain Current
* ID= 22.4A@ TC=25℃
* Drain Source Voltage- : VDSS= 400V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max)
* 100% avalanche tested

STP9NM40N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22.4 A PD Total Dissipation @TC=25℃ 60 W TJ Max. Operating Junction Temperature 150 ℃

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Datasheet Details

Part number
STP9NM40N
Manufacturer
INCHANGE
File Size
271.33 KB
Datasheet
STP9NM40N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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