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TK100E10N1

N-Channel MOSFET

TK100E10N1 Features

* Low drain-source on-resistance: RDS(on) ≤3.4mΩ. (VGS = 10 V)

* Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Switching Voltage Regulators

TK100E10N1 Datasheet (241.05 KB)

Preview of TK100E10N1 PDF

Datasheet Details

Part number:

TK100E10N1

Manufacturer:

INCHANGE

File Size:

241.05 KB

Description:

N-channel mosfet.

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TK100E10N1 N-Channel MOSFET INCHANGE

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