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IRGPF20F

INSULATED GATE BIPOLAR TRANSISTOR

IRGPF20F Features

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) ≤ 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (

IRGPF20F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGPF20F Datasheet (260.79 KB)

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Preview of IRGPF20F PDF

Datasheet Details

Part number:

IRGPF20F

Manufacturer:

IRF

File Size:

260.79 KB

Description:

Insulated gate bipolar transistor.

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IRGPF20F INSULATED GATE BIPOLAR TRANSISTOR IRF

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