IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR

IRF

Description

Previous Datasheet Index Next Data Sheet PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGPF30F
Manufacturer: IRF
File Size: 256.66 KB
Datasheet: IRGPF30F_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Switching-loss rating includes all "tail" losses

Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter

IRGPF30F Distributors

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IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR IRF

IRF IRGPF30F-like datasheet