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IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR

IRGPF50F Description

Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGPF50F Features

* Switching-loss rating includes all "tail" losses

IRGPF50F Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter

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Datasheet Details

Part number
IRGPF50F
Manufacturer
IRF
File Size
261.57 KB
Datasheet
IRGPF50F_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
IRF IRGPF50F-like datasheet