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IRGPF40F INSULATED GATE BIPOLAR TRANSISTOR

IRGPF40F Description

Previous Datasheet Index Next Data Sheet PD - 9.770A IRGPF40F INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGPF40F Features

* Switching-loss rating includes all "tail" losses

IRGPF40F Applications

* TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter

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Datasheet Details

Part number
IRGPF40F
Manufacturer
IRF
File Size
259.10 KB
Datasheet
IRGPF40F_IRF.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR IRF
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