Description
The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx
are high-speed, 4,194,304-bit static RAMs organized as
262,144 words by 16 bits.It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provi
Features
- HIGH SPEED: (IS61/64WV25616ALL/BLL).
- High-speed access time: 8, 10, 20 ns.
- Low Active Power: 85 mW (typical).
- Low Standby Power: 7 mW (typical)
CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS).
- High-speed access time: 25, 35, 45 ns.
- Low Active Power: 35 mW (typical).
- Low Standby Power: 0.6 mW (typical)
CMOS standby.
- Single power supply.
- Vdd 1.65V to 2.2V (IS61WV25616Axx).
- Vdd 2.4V to 3.6V (IS61/64WV25616Bxx).
