IS61WV25616EDALL Datasheet - ISSI

IS61WV25616EDALL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

When CS# is HIGH (deselected), the device assumes a standby mode at which th

IS61WV25616EDALL Features

* High-speed access time: 20ns

* Single power supply

* 1.65V-2.2V VDD

* Low Standby Current:1.5mA (typical)

* Fully static operation: no clock or refresh required

* Data control

* Three state outputs

* Industrial and Automotive temperature support

* Lead-free

Datasheet Details

IS61WV25616EDALL

ISSI

895.68 KB

256k x 16 high speed asynchronous cmos static ram.

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