IS61WV25616LEBLL Datasheet - ISSI

IS61WV25616LEBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit desig

IS61WV25616LEBLL Features

* High-speed access time: 12ns, 15ns

* Single power supply

* 2.4V-3.6V VDD

* Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ.)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin i

Datasheet Details

IS61WV25616LEBLL

ISSI

795.37 KB

256k x 16 high speed asynchronous cmos static ram.

📁 Related Datasheet

📌 All Tags