* q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions Character
IXFH13N100 Datasheet (149.88 KB)
IXFH13N100
IXYS Corporation
149.88 KB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
.
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