IXFH13N100 Datasheet - IXYS Corporation

IXFH13N100 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 V DSS IR D25 DS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr £ 250 ns Maximum Ratings TO-247 AD (IXFH) V DSS VDGR VGS VGSM ID25 I DM IAR EAR dv/dt PD TJ TJM T stg TL Md Weight T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C T C .

IXFH13N100 Features

* q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions Character

IXFH13N100_IXYSCorporation.pdf