IXFH13N100 Datasheet - IXYS Corporation

IXFH13N100, Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions .

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IXFH13N100_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH13N100

Manufacturer:

IXYS Corporation

File Size:

149.88 KB

Description:

Power MOSFET

Features

* q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS(th) IGSS IDSS RDS(on) Test Conditions Character

Applications

* q DC-DC converters q Synchronous rectification q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls q Low voltage relays Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings

IXFH13N100 Distributors

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IXFH13N100 Power MOSFET IXYS Corporation

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