IXFH13N80Q Datasheet - IXYS Corporation

IXFH13N80Q - HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800 V 13 A 0.70 W trr £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°.

IXFH13N80Q Features

* IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated

* Fast switching

* Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions (TJ = 25°C, unless otherwi

IXFH13N80Q_IXYSCorporation.pdf