IXFH13N80, IXFM11N80 Datasheet - IXYS Corporation

IXFH13N80 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS 800 V 800 V I D25 11 A 13 A trr £ 250 ns R DS(on) 0.95 W 0.80 W Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD.

IXFH13N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Symbol VDSS VGS(th

IXFM11N80_IXYSCorporation.pdf

IXFH13N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFH13N80, IXFM11N80. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFH13N80, IXFM11N80

Manufacturer:

IXYS Corporation

File Size:

665.40 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFH13N80, IXFM11N80.
Please refer to the document for exact specifications by model.

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TAGS

IXFH13N80 IXFM11N80 Power MOSFET IXYS Corporation

IXFH13N80 Distributor