* Low gate charge
* International standard packages
* Epoxy meet UL 94 V-0, flammability classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche energy and current rated
* Fast intrinsic Rectifier Adva
IXFH52N30Q Datasheet (98.81 KB)
IXFH52N30Q
IXYS Corporation
98.81 KB
Power mosfet.
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances.
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