IXFH52N30Q, IXFK52N30Q Datasheet - IXYS Corporation

IXFH52N30Q - Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt

IXFH52N30Q Features

* Low gate charge

* International standard packages

* Epoxy meet UL 94 V-0, flammability classification

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Avalanche energy and current rated

* Fast intrinsic Rectifier Adva

IXFK52N30Q_IXYSCorporation.pdf