IXFH58N20 Datasheet - IXYS Corporation

IXFH58N20 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS 200 V 200 V 200 V ID25 42 A 50 A 58 A trr £ 200 ns TO-247 AD (IXFH) RDS(on) 60mW 45mW 40mW Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg T L Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by .

IXFH58N20 Features

* Internationalstandardpackages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFH58N20 Datasheet (678.74 KB)