IXFH58N20Q - HiPerFET Power MOSFETs

IXYS Corporation

Datasheet Details

l l l 1.13/10 Nm/lb. in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40 V V nA µA mA mΩ l l l IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rate.

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Published: Apr 23, 2008 |