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IXFH5N100P, IXFP5N100P Power MOSFET

IXFH5N100P Description

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N1.

IXFH5N100P Features

* z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS

IXFH5N100P Applications

* z z z ±100 nA 10 μA 750 μA 2.8 Ω VGS = 10V, ID = 0.5
* ID25, Note 1 z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Uninterrupted power supplies AC motor control High speed power switching applications DS99923(07/08) © 2008 IXYS CORPORATION, All r

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This datasheet PDF includes multiple part numbers: IXFH5N100P, IXFP5N100P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFH5N100P, IXFP5N100P
Manufacturer
IXYS Corporation
File Size
174.16 KB
Datasheet
IXFP5N100P_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFH5N100P, IXFP5N100P.
Please refer to the document for exact specifications by model.

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