IXFH5N100P Datasheet - IXYS Corporation

IXFH5N100P Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P RDS(on) VDSS ID25 = 1000V = 5A ≤ 2.8Ω TO-263 (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ V.

IXFH5N100P Features

* z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS

IXFH5N100P Datasheet (174.16 KB)