IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS.

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Datasheet Specifications

Part number: IXFL44N60
Manufacturer: IXYS Corporation
File Size: 546.97 KB
Datasheet: IXFL44N60_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs Single Die MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z z z Weight DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 4.5 ± 200 TJ = 25°C TJ = 125°C V V nA z z VDSS VGH(th) IGSS ID

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IXFL44N60 HiPerFET Power MOSFETs Single Die MOSFET IXYS Corporation

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