* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFL44N80 Datasheet (533.92 KB)
IXFL44N80
IXYS Corporation
533.92 KB
Hiperfet power mosfets isoplus264.
HiPerFETTM Power MOSFETs ISOPLUS264TM
(Electrically Isolated Backside) Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t.
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