IXFL44N80 Datasheet (IXYS Corporation) - HiPerFET Power MOSFETs ISOPLUS264

IXFL44N80, HiPerFET Power MOSFETs ISOPLUS264

HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFL 44N80 VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤

IXFL44N80 Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(